Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA, 2V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 85°C (TA)

Power - Max :

1.47W

Product Status :

Obsolete

Supplier Device Package :

16-DIP

Transistor Type :

7 NPN Darlington

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500µA, 350mA

Voltage - Collector Emitter Breakdown (Max) :

50V