Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

1A, 700mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 100mA, 2V / 200 @ 100mA, 2V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

400mW

Product Status :

Obsolete

Supplier Device Package :

VS-6 (2.9x2.8)

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

170mV @ 6mA, 300mA, 230mV @ 10mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

50V