Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 6V

Frequency - Transition :

9GHz

Gain :

16dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

360mW

Product Status :

Obsolete

Supplier Device Package :

TO-236AB

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V