Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

39 @ 5mA, 10V

Frequency - Transition :

1.1GHz

Gain :

-

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

125°C (TJ)

Package / Case :

3-SIP

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

3-SIP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

19V